Toshiba Unveils Microwave Transistor Roadmap at IEEE MTT-S
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Toshiba Unveils Microwave Transistor Roadmap at IEEE MTT-S

IRVINE, Calif., June 16 /PRNewswire/ -- Toshiba America Electronic Components, Inc. (TAEC*) will exhibit commercially available gallium nitride (GaN) field effect transistors (FET) from Toshiba Corp. (Toshiba) for C-band, X-band and Ku-band applications and Power Added Efficiency gallium arsenide (GaAs) FETs for X-band and C-band applications at this year's IEEE MTT-S International Microwave Symposium, which will be held June 15 through 20 in Atlanta, Georgia. A roadmap showing Toshiba's plans for continued development of a wide range of GaN devices will also be featured in the booth.

"As a longtime supplier of high-performance gallium arsenide microwave devices for wireless applications in the S, C, X and Ku frequency bands, Toshiba plans to continue to expand the product line with new higher efficiency solutions," said Tadahisa Aoto, manager, microwave sales and marketing for Toshiba Corporation, Social Infrastructure Systems Company. "In addition, Toshiba is committed to ongoing development of GaN technology as one of the focus areas for its high power microwave transistor line. GaN enables higher levels of performance that surpass the capabilities of GaAs as a result of its superior material properties, with higher electron velocity, higher breakdown voltage, and easier handling characteristics."

Toshiba's initial commercial GaN lineup includes a 50W X-band device for radar and medical applications that operates in the 8.5GHz to 9.6GHz range, a 50W X-band device for Doppler radar in weather, border protection and security applications in the 9.5GHz to 10.5GHz range, and a 50W Ku-band device in the 14.0GHz to 14.5GHz range for satellite communications.

The Toshiba GaN roadmap through 2010 includes devices for the C-, X-, Ku- and Ka bands, with maximum output power of 150+W in a C-band device. For communications applications, 4W and 8W C-band GaN HEMTs for wideband are planned in 2008/2009, followed by SATCOM devices including a 100+W C-band device in 2009 and a 150+W C-band device in 2010. Additional Ku-band devices with output power of 50W are planned for 2009, with 100W Ku-band GaN HEMTs targeted for 2010. Higher frequency devices in the Ka-band, from 18GHz to 42GHz, with output power of 5W and 10W, are on the roadmap for 2009 and 2010, respectively.

For X-band applications in the 8GHz to 12GHz range, additional 50W devices are planned for 2009 to complement Toshiba's first two GaN products for radar and medical applications in this frequency, along with a low noise amplifier, 8W and 15W high performance transistors for broadband applications, and by 2010, a 100W X-band device for radar applications.

Toshiba Microwave Product Overview

Toshiba is a leading supplier of high-performance gallium arsenide microwave devices. The company's line-up of products consists of a series of components within the S, C, X and Ku frequency bands, which are used in a wide variety of wireless applications. These applications include personal communications systems (PCS), multi channel distribution systems (MMDS), Wireless LAN/WAN systems, point-to-point terrestrial microwave radio, wireless local loop (WLL), satellite communications systems (SATCOM) such as high power solid state power amplifiers (SSPA) and very small aperture terminals (VSAT), radar systems, mobile communications, and other communication systems. Toshiba is also expanding its family of higher gain, higher output power GaN devices for applications in satellite communications, terrestrial point-to-point communications, radar systems and medical uses.

*About Toshiba Corp. and TAEC

Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributions and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, advanced materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today's leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.

Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's third largest semiconductor manufacturer (Gartner, 2007 WW Semiconductor Revenue, April 2008). For additional company and product information, please visit

Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba's "Handling Guide for Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook." This information is available at, or from your TAEC representative.

Visit TAEC in IEEE MTT-S booth #1701

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