GaN Systems presents paper on latest gallium nitride transistor developments at ECS Electrochemical Energy Summit
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GaN Systems presents paper on latest gallium nitride transistor developments at ECS Electrochemical Energy Summit

OTTAWA, ON – August 2013 – A team of experts on gallium nitride technologies from GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, is presenting a major conference paper at the 224th ECS Electrochemical Energy Summit (San Francisco, California October 27 – November 1).  “Characterisations and performance of D-Mode GaN HEMT transistor used in a cascode configuration” authored by Tom MacElwee, John Roberts, Hughes Lafontaine, I. Scott, Greg Klowak, and Lyubov Yushyna will be presented during the GaN and SiC Power Technologies symposium.

GaN Systems has developed proprietary gallium nitride high power transistors for clean technology power conversion applications, enabling superior switching efficiencies over current silicon based solutions.  These devices offer substantial benefits to switching power supply designs, inverters, hybrid and electric vehicles, battery management and power factor correction

The paper reports on D-mode HEMT device performance when configured in cascode mode, including basic parameters of the device and its integration into a PQFN package.  A detailed discussion demonstrates the 500V 3.3A switching characteristics of the cascode and proves excellent switching performance with measured voltage slew rates as large as 70 V/ns.

The GaN D-mode HEMT device developed in the work covered by the paper was fabricated using a conventional RF GaN process flow on 3” 4H SI-SiC starting substrate. The SiC substrate should allow for excellent thermal performance and high voltage operation of the switching device due to the semi-insulating nature of the SiC substrate.

Further information on the Conference is currently available on the meeting website (

About GaN Systems

GaN Systems is the first place systems designers go to realize all of the benefits of gallium nitride in their power conversion and control applications. To overcome silicon’s limitations in switching speed, temperature, voltage and current, the company develops the most complete range of gallium nitride power switching solutions for a variety of markets. Its unique Island Technology™ addresses today’s cost, performance, and manufacturability related challenges of gallium nitride resulting in devices that are approximately four times smaller and four times more efficient than traditional design approaches. The Company also leverages existing multiā€sourced manufacturing processes due to its transportable, fabless model, and through additional innovations, makes it easy to incorporate gallium nitride into any design. GaN Systems is run by a seasoned semiconductor team with decades of industry experience and a track record of repeated success. The Company stands to do more for gallium nitride adoption in power conversion than any other. For more information, please visit:


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