Use of Gallium Nitride Achieves High Output of up to 100 W
TOKYO — (BUSINESS WIRE) — February 24, 2010 — Mitsubishi Electric Corporation (TOKYO:6503) announced today it has developed four models of gallium nitride high-electron mobility transistor (GaN HEMT) for 4.0 GHz band satellite applications, with output ranging from 2W to 100W. With these products, Mitsubishi Electric will become the first company in the world to market GaN HEMTs engineered exclusively for these particular applications. Sample shipments are scheduled to begin in March 2010.
Summary of Sale
| Product | Model | Description | ||
|
Internally impedance matched
|
MGFC50G3742S |
f=3.7 - 4.2 GHz (one of the three separated bands) Output Power: 50 dBm (100 W), Efficiency: 60% |
||
| MGFC46G3742S |
f=3.7 - 4.2 GHz (one of the three separated bands) Output Power: 46 dBm (40 W), Efficiency: 60% |
|||
| MGFC43G3742S |
f=3.7 - 4.2 GHz
Output Power: 43 dBm (20 W), Efficiency: 60% |
|||
|
Non internally impedance matched
|
MGF2633GS |
f=4.0 GHz
Output Power:33 dBm (2 W), Efficiency: 50% |
Aim of Sale
As more and more satellites are meeting the end of their operational
lifespan, demand for new microwave communication satellites has recently
been growing. While transmitter devices in these communication
satellites have traditionally utilized gallium arsenide (GaAs)
amplifiers, gallium nitride (GaN) HEMT amplifiers offer higher
efficiency, as well as high-filed electron velocity and high breakdown
fields. These characteristics help make transmitter devices smaller,
lighter and more durable.
