EL SEGUNDO, Calif. – Oct. 31, 2017 -- Balanced amplifier approaches are popular in RF applications due to a number of implicit advantages of the topology. Using one of these approaches in the microwave region, however, has been challenging because of the difficulty in creating an anti-phase power splitter/combiner, or balun. In this upcoming webinar, “Simulating a 200 W L-Band Push-Pull GaN Power Amplifier” presenter Dominic FitzPatrick of PoweRFul Microwave demonstrates the use of NI AWR Design Environment to create a 50-percent bandwidth planar balun and simulate a 200 W gallium arsenide (GaN) transistor for a high-power push-pull amplifier.
For details and to register, visit http://www.awrcorp.com/news/events/event/webinar-simulating-200w-l-band-push-pull-gan-power-amplifier.
Wednesday, November 15, 2017
8:00 a.m. PT/11:00 a.m. ET/ 3:00 p.m. UTC
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