Webinar on GaN Power Amplifier Design Features NI AWR Software

EL SEGUNDO, Calif. – Oct. 31, 2017 -- Balanced amplifier approaches are popular in RF applications due to a number of implicit advantages of the topology. Using one of these approaches in the microwave region, however, has been challenging because of the difficulty in creating an anti-phase power splitter/combiner, or balun. In this upcoming webinar, “Simulating a 200 W L-Band Push-Pull GaN Power Amplifier” presenter Dominic FitzPatrick of PoweRFul Microwave demonstrates the use of NI AWR Design Environment to create a 50-percent bandwidth planar balun and simulate a 200 W gallium arsenide (GaN) transistor for a high-power push-pull amplifier.

Where:

For details and to register, visit http://www.awrcorp.com/news/events/event/webinar-simulating-200w-l-band-push-pull-gan-power-amplifier.

When:

Wednesday, November 15, 2017

8:00 a.m. PT/11:00 a.m. ET/ 3:00 p.m. UTC

AWR, AWR Design Environment, National Instruments, NI and ni.com are trademarks of National Instruments. Other product and company names listed are trademarks or trade names of their respective companies.


Contacts: 
     
Sherry Hess      
Vice President of Marketing
AWR Group, NI       
(310) 726-3000       
Email Contact

 

 




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