Toshiba Launches 100V N-Channel Power MOSFETs Supporting 4.5V Logic Level Drive for Quick Chargers

TOKYO — (BUSINESS WIRE) — January 11, 2017Toshiba Corporation’s (TOKYO:6502) Storage & Electronic Devices Solutions Company today expanded its line-up of low-voltage N-channel power MOSFETs with the addition of 100V N-channel power MOSFETs supporting 4.5V logic level drive for quick chargers. The two new MOSFETs of the “U-MOS VIII-H Series”, “TPH4R10ANL” and “TPH6R30ANL,” start shipments from today.

This Smart News Release features multimedia. View the full release here: http://www.businesswire.com/news/home/20170111005450/en/

Toshiba: 100V N-Channel Power MOSFET Supporting 4.5V Logic Level Drive for Quick Chargers (Photo: Bu ...

Toshiba: 100V N-Channel Power MOSFET Supporting 4.5V Logic Level Drive for Quick Chargers (Photo: Business Wire)

Along with the spread and evolution of quick chargers, higher performance is demanded for power MOSFETs used in secondary-side rectifiers. The new MOSFETs utilize Toshiba’s low-voltage trench structure process to achieve the industry’s leading-class[1] low on-resistance and high-speed performance. The structure lowers the performance index for “RDS(ON) * Qsw” [2], improving switching applications. Output loss is improved by the reduction of output charge, which can contribute to higher set efficiency. Also, support for 4.5 V logic level drives makes buffer-less drive from the controller IC possible, contributing to reducing power consumption of the system. Furthermore, the new products can respond to the high output and voltage power supplies required in USB 3.0 related applications. The new MOSFETs are suited for applications including quick chargers, switched-mode power supplies and DC-DC converters for servers and communication equipment.

Main Specifications of the New MOSFETs:

(Unless otherwise specified, Ta=25 ℃)

   
Part Number   Polarity  

Absolute
Maximum Ratings

 

Drain-source
On-resistance
RDS(ON) max
(mΩ)

 

Total
Gate
Charge
Qg typ.
(nC)

 

Output
Charge
Qoss typ.
(nC)

 

Gate Switch
Charge Qsw
typ.
(nC)

 

Input
Capacitance
Ciss typ.
(pF)

  Package

Drain-
source
Voltage
V DSS (V)

 

Drain
Current
(DC)
I D (A)
@T c =
25℃

@V GS =
10 V

 

@V GS =
4.5 V

TPH6R30ANL N-ch 100 45 6.3 10.3 55 46 14 3300

SOP
Advance

TPH4R10ANL       70   4.1   6.6   75   74   21   4850  
 

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