Toshiba Launches New Line-up of Low On-resistance MOSFETs for Load Switches in Mobile Devices Utilizing a High Power Dissipation, Small-size Package

TOKYO — (BUSINESS WIRE) — November 28, 2016Toshiba Corporation’s (TOKYO:6502) Storage & Electronic Devices Solutions Company today announced the addition of new products that utilize a newly developed high power dissipation, small-size “TSOP6F” package to its line-up of small low on-resistance MOSFETs for charging circuit load switches in mobile devices, including smartphones and tablets. Sample shipments of the first product in the new line-up, the 20V P-channel single MOSFET “SSM6J801R,” start today. Mass production is scheduled to start from the end of December.

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Toshiba: Low On-resistance MOSFET for Load Switches in Mobile Devices Utilizing a High Power Dissipa ...

Toshiba: Low On-resistance MOSFET for Load Switches in Mobile Devices Utilizing a High Power Dissipation, Small-size Package: SSM6J801R (Photo: Business Wire)

Toshiba has developed the new 2.9mm x 2.8mm small-size package “TSOP6F” to meet demand for smaller devices for charging circuit load switches and LED drive circuits in mobile devices. Despite having the same mounting space and land pattern as the existing SOT-457 package, the new package realizes power dissipation of 1.5W.

Small-size low on-resistance MOSFETs using the new “TSOP6F” package will be launched with the new MOSFET “SSM6J801R,” while future plans to expand the line-up to include 2-in-1 products.

Part Number   Composition   VDSS (V)   VGSS (V)   ID (A)   RDS(ON) typ. (mΩ)   Ciss (pF)   Sample   Mass Production
VGS=1.5V   VGS=1.8V   VGS=2.5V   VGS=4.5V  
SSM6J801R Pch Single -20 -8/+6 -6 47 39 31 25 840 OK Dec./'16
SSM6J808R -40 -20/+10 -7 - - - 41 1105 Dec./'16 2Q/'17
SSM6K810R Nch Single 100 ±20 3.5 - - - 65 430 Dec./'16 2Q/'17
SSM6N813R Nch Dual 100 ±20 3.5 - - - 120 172 Apr./'17 3Q/'17
SSM6N815R     100   ±20   2   -   -   -   95   223   Mar./'17   May/'17

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