Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology for High Frequency Resonant and Envelope Tracking Power Supplies at the 2014 Applied Power Electronics and Exposition Conference (APEC®)

At the IEEE APEC 2014 power electronics industry conference, EPC applications experts will make technical presentations on GaN FET technology and applications showing the superiority of GaN transistors compared to silicon power MOSFETs

EL SEGUNDO, Calif. — (BUSINESS WIRE) — February 27, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs, will be presenting three application-focused technical presentations at APEC 2014. Participants will learn about high frequency resonant converter, and high-frequency, hard-switched power converter design. The conference will be held in Fort Worth, Texas, from March 16th through the 20th.

The Premier Event in Applied Power Electronics™, APEC focuses on the practical and applied aspects of the power electronics business. It is the leading conference for practicing power electronics professionals, addressing a broad range of topics in the use, design, manufacture and marketing of all kinds of power electronics components and equipment. For more information on APEC go to: http://www.apec-conf.org/.

“We are honored that the technical review committee of APEC 2014 has selected EPC experts to give technical papers focusing on GaN technology at their annual conference. This selection supports our belief that the superior performance of GaN technology has gained the interest and acceptance of power system design engineers,” said Alex Lidow, EPC’s co-founder and CEO.

Technical Presentations Featuring GaN FETs by EPC Experts:

Attendees interested in meeting with EPC applications experts during the event can send a request to info@epc-co.com.

About EPC

EPC is the leader in enhancement-mode gallium nitride-based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.



Contact:

Efficient Power Conversion
Joe Engle, 310-986-0350
Email Contact




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